[ODCAD Comment] HP Lab: Organic WORM Memory
HP Lab and Electrical Engineering Dept., Princeton Univ. have teamed up to use polymer semiconductor PEDOT as active material for write-once-read-many-times (WORM) device.

Regular PEDOT is semiconductor. However, its conductivity can be changed into insulating when enough current is put through the material. The blown fuse, then can be read as a zero and an intact fuse as a one. The bit memory cell has size 100-200 nanometer.

Stack up layered structure is possible to achieve high density /area. It could be cheap because it may not require clean-room environment. It is not clear if photolithography is required.

It can be fast since the technology reads each bit by current instead by moving head.

Disadvantage is that the cell size may have difficulty to scale down further.

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